Abstract
Ingress of chloride into α-Al2O3(0001) and Al(111) was calculated by first-principles theory calculations by considering Cl insertion into Al or O vacancies within α-Al2O3(0001) or into vacancy or interstitial sites within Al(111). For α-Al2O3, the formation of an O vacancy is energetically more favorable than of an Al vacancy. The insertion of Cl into an O vacancy is also more favorable than into an Al vacancy. A high energy barrier has been derived for Cl transport within the neighboring O vacancies. In addition, the work function decreases with Cl ingress into the interior of the oxide. For Al(111), Cl insertion into either an Al vacancy or an interstitial site is less favorable compared to the insertion into α-Al2O3. The work function only changes slightly with Cl insertion into an Al vacancy. Moreover, the pre-inserted Cl reduces the energy-barrier for further Cl ingress into α-Al2O3, whereas Cl tends to stay in the sub-surface layer of Al(111), suggesting Cl accumulation at the Al2O3/Al.