Abstract
The main objective of this research project is to describe and perform the industry-standard parametric Fault Isolation and Failure analysis on USB2 lanes, which have been experimented with excessive Electrical Overstress, Electrostatic Discharge, for Qualitative research of the product. The scope of this project is to give a detailed explanation of FI tools like the IREM (Infra-Red Emission Microscopy), TIVA (Thermally Induced Voltage Alteration), and ELITE Thermal Imaging, and analyze the results. The study will be exclusive to the USB2 Lanes exposed to intentional Electrical overstress on the USB2 lane 4, D+ lane for qualitative analysis. The study will consist of a detailed overview of the techniques used to deal with the USB2 EOS defect. This includes RV (Reject Validation) to validate the Failure, Parametric failure validation like IV curves, Imaging using the IREM, TIVA, and ELITE Thermal imaging tools; and Failure Isolation using Layout and Schematic tools. This study will also explain the details of Electrical Overstress Mechanisms, its causes, and preventive measures. The study done in this research project will enable the reader to understand the tools used to Isolate the Electrical Overstress Failures, the industry-standard techniques for Failure Isolation of EOS failures.